Transistor
2SB1651
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9鹵0.1
s
Features
q
q
q
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
鈥?5
鈥?5
鈥?
鈥?00
鈥?0
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1
2
3
0.45
鈥?.05
s
Absolute Maximum Ratings
(Ta=25藲C)
0.45
鈥?.05
2.5鹵0.5
2.5鹵0.5
+0.1
+0.1
1:Emitter
2:Collector
3:Base
MT1 Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Noise voltage
Transition frequency
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE
NV
f
T
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
I
C
= 鈥?0碌A, I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A, I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
V
CE
= 鈥?V, I
C
= 鈥?00mA
V
CE
= 鈥?0V, I
C
= 鈥?mA, G
V
= 80dB,
R
g
= 100k鈩? Function = FLAT
V
CB
= 鈥?V, I
E
= 2mA, f = 200MHz
110
150
鈥?5
鈥?5
鈥?
180
700
鈥?0.6
鈥?
V
V
mV
MHz
min
typ
max
鈥?00
鈥?
Unit
nA
碌A
V
V
V
*1
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
T
360 ~ 700
Rank
h
FE
2.5鹵0.1
14.5鹵0.5
0.85
Low noise voltage NV.
High foward current transfer ratio h
FE
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
0.15
0.7
4.0
1.05 2.5鹵0.1
(1.45)
鹵0.05
0.8
0.65 max.
1.0
3.5鹵0.1
0.8
1
1
2
3
