鈭?/div>
2.5
max
3.0
max
70
typ
120
typ
V
V
MHz
pF
16.2
B
(7 0鈩?)
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1649)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2562
150
150
5
15
1
85(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Audio, Series Regulator and General Purpose
(Ta=25擄C)
Unit
External Dimensions
FM100(TO3PF)
0.8
鹵0.2
15.6
鹵0.2
5.5
鹵0.2
3.45
鹵0.2
5.5
酶3.3
鹵0.2
1.6
碌
A
V
9.5
鹵0.2
碌
A
23.0
鹵0.3
a
b
1.75
2.15
1.05
+0.2
-0.1
5.45
鹵0.1
1.5
4.4
5.45
鹵0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
鈭梙
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(鈩?
4
I
C
(A)
10
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(mA)
10
I
B2
(mA)
鈥?0
t
on
(
碌
s)
0.8typ
t
stg
(
碌
s)
4.0typ
t
f
(
碌
s)
1.2typ
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
15
V
CE
(sat) 鈥?I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t te r S a tu r a t i o n Vo lt a g e V
C E(s at)
( V)
3
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
15
( V
CE
= 4 V )
10mA
50mA
3mA
2m
A
1.5
mA
1 .0 m A
C o l l e c t o r Cu r r e n t I
C
( A)
10
0.5mA
2
C o l l e c t or C u r r e n t I
C
( A )
0 .8 m A
10
emp
mp)
I
C
= . 15 A
I
C
= .1 0A
1
I
C
= . 5A
)
e Te
eT
藲C (
5
125
25藲C
0
0
2
4
6
0
0 .2
0.5
1
5
10
50
100 200
0
0
1
B a s e - Em i t t o r Vo l ta g e V
B E
( V)
鈥?0藲
C (C
I
B
=0.3mA
5
(Cas
ase T
Cas
emp)
2
3.0
2. 2
C ol l ec t or - Emi tte r V ol ta ge V
C E
(V )
Ba se C u r r e nt I
B
( m A)
( V
CE
= 4 V )
50000
DC C u r r e nt Ga i n h
FE
DC C u r r e nt Ga i n h
FE
50000
12
5藲C
( V
C E
= 4 V)
Transient Thermal Resistance
胃
j -a
( 藲C / W )
h
FE
鈥?I
C
Characteristics
(Typical)
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
3. 0
Typ
10000
5000
10000
5000
1. 0
25
藲C
0. 5
鈥?0
藲C
1000
500
02
0.5
1
C ol l e ct or Cu rren t I
C
(A )
5
10
15
1000
500
02
0 .5
1
Co l le c to r Cu r r e n t I
C
( A)
5
10
15
0. 1
1
10
10 0
Time t(ms)
1 0 0 0 2 00 0
f
T
鈥?I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
80
Safe Operating Area
(Single Pulse)
100
Pc 鈥?Ta Derating
M ax im um P ow er D i s s i p a t i o n P
C
(W )
Cu t-o ff Fre qu e n c y f
T
(M H
Z
)
80
60
W
ith
In
60
fin
ite
40
he
at
si
nk
40
20
20
Without Heatsink
0
25
50
75
100
125
1 50
0
鈥?.02 鈥?. 05 鈥? 1
鈥? .5
鈥?
鈥?
鈥?0
3.5
0
Em it t e r C urr en t I
E
(A )
A m b i en t T e m p e r a t ur e T a ( 藲 C )
160
1
