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Power Transistors

2SB1643

Silicon PNP epitaxial planar type

For power amplification

10.0鹵0.3

1.5鹵0.1

8.5鹵0.2

6.0鹵0.5

3.4鹵0.3

Unit: mm

1.0鹵0.1

s

Features

q

q

q

1.5max.

1.1max.

High collector to emitter V

CEO

High collector power dissipation P

C

N type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

(T

C

=25藲C)

Ratings

鈥?0

鈥?0

鈥?

鈥?

鈥?

鈥?

40

1.3

150

鈥?5 to +150

Unit

V

V

10.5min.

2.0

0.8鹵0.1

0.5max.

2.54鹵0.3

5.08鹵0.5

s

Absolute Maximum Ratings

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power T

C

=25擄C

dissipation

Ta=25擄C

Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

1

2

3

1:Base

2:Collector

3:Emitter

N Type Package

Unit: mm

3.4鹵0.3

1.0鹵0.1

8.5鹵0.2

6.0鹵0.3

1.5

鈥?.4

2.0

A

A

W

藲C

4.4鹵0.5

3.0

鈥?.2

0.8鹵0.1

2.54鹵0.3

R0.5

R0.5

1.1 max.

0 to 0.4

5.08鹵0.5

1

2

3

藲C

1:Base

2:Collector

3:Emitter

N Type Package (DS)

s

Electrical Characteristics

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

*

h

(T

C

=25藲C)

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

h

FE

f

T

*

Conditions

V

CB

= 鈥?0V, I

E

= 0

V

EB

= 鈥?0V, I

C

= 0

V

EB

= 鈥?V, I

C

= 0

I

C

= 鈥?5mA, I

B

= 0

V

CE

= 鈥?V, I

C

= 鈥?0.5A

I

C

= 鈥?A, I

B

= 鈥?0.05A

V

CE

= 鈥?2V, I

C

= 鈥?0.2A, f = 10MHz

min

typ

max

鈥?00

鈥?00

鈥?00

4.4鹵0.5

Unit

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

V

鈥?0

300

700

鈥?

30

V

CE(sat)

V

MHz

FE

Rank classification

Q

300 to 500

P

400 to 700

Rank

h

FE

14.7鹵0.5

+0.4

A

10.0鹵0.3

V

+0

1

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