Power Transistors
2SB1631
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s
q
q
q
5.0鹵0.1
Features
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
Allowing automatic insertion with radial taping
(T
C
=25藲C)
Ratings
鈥?0
鈥?0
鈥?
鈥?
鈥?
鈥?
15
2
150
鈥?5 to +150
Unit
V
V
V
A
A
A
W
藲C
藲C
2.5鹵0.2
C1.0
10.0鹵0.2
1.0
13.0鹵0.2
4.2鹵0.2
90擄
2.5鹵0.2
1.2鹵0.1
18.0鹵0.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
C1.0
2.25鹵0.2
0.35鹵0.1
0.65鹵0.1
1.05鹵0.1
0.55鹵0.1
0.55鹵0.1
1 2 3
2.5鹵0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
*
h
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
EB
= 鈥?0V, I
C
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?5mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?0.5A
I
C
= 鈥?A, I
B
= 鈥?0.05A
V
CE
= 鈥?2V, I
C
= 鈥?0.2A, f = 10MHz
30
鈥?0
300
700
鈥?
V
MHz
min
typ
max
鈥?00
鈥?00
鈥?00
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
FE
Rank classification
Q
300 to 500
P
400 to 700
Rank
h
FE
1
1
2
3
