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2SB1623A Datasheet

  • 2SB1623A

  • Silicon PNP epitaxial planer type

  • 3頁(yè)

  • PANASONIC

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Power Transistors
2SB1623A
Silicon PNP epitaxial planar type
For power amplification
9.9
鹵0.3
Unit: mm
4.6
鹵0.2
2.9
鹵0.2
3.0
鹵0.5
鈻?/div>
Features
鈥?/div>
High forward current transfer ratio h
FE
鈥?/div>
Satisfactory linearity of forward current transfer ratio h
FE
鈥?/div>
Dielectric breakdown voltage of the package:
>
5 kV
15.0
鹵0.5
蠁
3.2
鹵0.1
13.7
鹵0.2
4.2
鹵0.2
Solder Dip
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
j
T
stg
T
C
=
25擄C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
鈭?0
鈭?0
鈭?
鈭?
鈭?
40
2.0
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
W
1.4
鹵0.2
1.6
鹵0.2
0.8
鹵0.1
2.6
鹵0.1
0.55
鹵0.15
2.54
鹵0.30
5.08
鹵0.50
1
2
3
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
V
BE
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
V
CE(sat)1
V
CE(sat)2
Transition frequency
Turn-on time
Storage time
Fall time
f
T
t
on
t
stg
t
f
Conditions
I
C
= 鈭?0
mA, I
B
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?/div>
0.5 A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?2
mA
I
C
= 鈭?
A, I
B
= 鈭?0
mA
V
CE
= 鈭?0
V, I
C
= 鈭?/div>
0.5 A, f
=
1 MHz
I
C
= 鈭?
A, I
B1
= 鈭?2
mA, I
B2
=
12 mA
V
CC
= 鈭?0
V
20
0.3
2.0
0.5
1 000
1 000
10 000
鈭?
鈭?
MHz
碌s
碌s
碌s
V
Min
鈭?0
鈭?.5
鈭?00
鈭?00
鈭?
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
1 000 to 2 500
Q
P
2 000 to 5 000 4 000 to 10 000
Publication date: January 2003
SJD00301AED
1

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