Power Transistors
2SB1606
Silicon PNP epitaxial planar type
For power switching
Unit: mm
4.6鹵0.2
s
Features
q
q
q
q
蠁3.2鹵0.1
9.9鹵0.3
2.9鹵0.2
4.1鹵0.2 8.0鹵0.2
Solder Dip
Low collector to emitter saturation voltage V
CE(sat)
Satisfactory linearity of foward current transfer ratio h
FE
Large collector current I
C
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
(Ta=25藲C)
Ratings
鈥?30
鈥?0
鈥?
鈥?0
鈥?
40
2
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
15.0鹵0.3
3.0鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
13.7
鈥?.2
+0.5
1.2鹵0.15
1.45鹵0.15
0.75鹵0.1
2.54鹵0.2
5.08鹵0.4
1 2 3
2.6鹵0.1
0.7鹵0.1
7擄
1:Base
2:Collector
3:Emitter
TO鈥?20E Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
(Ta=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
I
C
= 鈥?A, I
B1
= 鈥?0.2A, I
B2
= 0.2A
Conditions
V
CB
= 鈥?00V, I
E
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?0mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?0.1A
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?A, I
B
= 鈥?0.2A
I
C
= 鈥?A, I
B
= 鈥?0.2A
V
CE
= 鈥?0V, I
C
= 鈥?0.5A, f = 10MHz
30
0.13
0.5
0.13
鈥?0
45
90
260
鈥?0.5
鈥?.5
V
V
MHz
碌s
碌s
碌s
min
typ
max
鈥?0
鈥?0
Unit
碌A(chǔ)
碌A(chǔ)
V
FE2
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
1
1
2
3
