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2SB1593 Datasheet

  • 2SB1593

  • For Low-Frequency Output Amplification

  • 3頁(yè)

  • PANASONIC

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Power Transistors
2SB1593
Silicon PNP epitaxial planar type
For low-frequency output amplification
7.5
鹵0.2
3.8
鹵0.2
Unit: mm
4.5
鹵0.2
鈻?/div>
Features
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
鈥?/div>
Allowing automatic insertion with radial taping
10.8
鹵0.2
0.65
鹵0.1
2.5
鹵0.1
0.85
鹵0.1
1.0
鹵0.1
0.8 C
90藲
0.8 C
16.0
鹵1.0
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage
(Resistor between B and E)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CER
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
鈭?9
鈭?9
鈭?0
鈭?1
鈭?
鈭?0
1.5
150
鈭?5 鈭?+150
Unit
V
V
0.7
鹵0.1
0.7
鹵0.1
1.15
鹵0.2
1.15
鹵0.2
0.5
鹵0.1
0.8 C
1
2
3
2.05
鹵0.2
0.4
鹵0.1
V
V
2.5
鹵0.2
2.5
鹵0.2
A
A
W
擄C
擄C
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emiter open)
Collector-emitter voltage
(Resistor between B and E)
Collector-emitter voltage (Base open)
Emiter-base voltage (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CER
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, R
BE
=
10 k鈩?/div>
I
C
= 鈭?
mA, I
B
=
0
I
E
= 鈭?0 碌A(chǔ),
I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?.6
A
I
C
= 鈭?.6
A, I
B
= 鈭?0
mA
V
CB
= 鈭?0
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
Min
鈭?9
鈭?9
鈭?0
鈭?1
100
鈭?/div>
0.3
200
110
150
450
鈭?/div>
0.5
Typ
Max
Unit
V
V
V
V
錚?/div>
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2003
SJD00085BED
1

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