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2SB1504 Datasheet

  • 2SB1504

  • Silicon PNP epitaxial planar type darlington

  • 3頁

  • PANASONIC

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Power Transistors
2SB1504
Silicon PNP epitaxial planar type darlington
Unit: mm
For power switching
鈥?/div>
High forward current transfer ratio h
FE
鈥?/div>
High-speed switching
鈥?/div>
Allowing automatic insertion with radial taping
3.8
鹵0.2
10.8
鹵0.2
7.5
鹵0.2
4.5
鹵0.2
0.65
鹵0.1
2.5
鹵0.1
0.85
鹵0.1
1.0
鹵0.1
0.8 C
90藲
0.8 C
16.0
鹵1.0
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
鈭?0
鈭?0
鈭?
鈭?
鈭?2
1.5
150
鈭?5
to
+150
Unit
V
V
V
A
A
W
擄C
擄C
0.7
鹵0.1
0.7
鹵0.1
1.15
鹵0.2
1.15
鹵0.2
0.5
鹵0.1
0.8 C
1
2
3
2.05
鹵0.2
0.4
鹵0.1
2.5
鹵0.2
2.5
鹵0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Internal Connection
C
B
E
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
= 鈭?0
mA, I
B
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?
mA
I
C
= 鈭?
A, I
B
= 鈭?
mA
V
CB
= 鈭?0
V, I
E
= 0.5
A, f
=
200 MHz
I
C
= 鈭?
A, I
B1
= 鈭?
mA, I
B2
=
8 mA
V
CC
= 鈭?0
V
20
0.5
2.0
1.0
1 000
500
鈭?.5
鈭?.0
V
V
MHz
碌s
碌s
碌s
Min
鈭?0
鈭?00
鈭?
10 000
Typ
Max
Unit
V
碌A(chǔ)
mA
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
P
1 000 to 2 500
Q
R
2 000 to 5 000 4 000 to 10 000
Publication date: April 2003
SJD00080BED
1

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