Power Transistors
2SB1503
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2276
6.0
20.0鹵0.5
蠁
3.3鹵0.2
5.0鹵0.3
3.0
Unit: mm
26.0鹵0.5
10.0
s
Features
q
q
q
Optimum for 110W HiFi output
High foward current transfer ratio h
FE
: 5000 to 30000
Low collector to emitter saturation voltage V
CE(sat)
: < 鈥?.5V
1.5
2.0
4.0
1.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
20.0鹵0.5
2.5
2.0鹵0.3
3.0鹵0.3
1.0鹵0.2
(T
C
=25藲C)
Ratings
鈥?60
鈥?40
鈥?
鈥?2
鈥?
120
3.5
150
鈥?5 to +150
Unit
V
V
V
A
2.7鹵0.3
0.6鹵0.2
5.45鹵0.3
10.9鹵0.5
1
2
3
A
W
藲C
藲C
B
1:Base
2:Collector
3:Emitter
TOP鈥?L Package
Internal Connection
C
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
E
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 鈥?60V, I
E
= 0
V
CE
= 鈥?40V, I
B
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?0mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?A
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?A, I
B
= 鈥?mA
I
C
= 鈥?A, I
B
= 鈥?mA
V
CE
= 鈥?0V, I
C
= 鈥?0.5A, f = 1MHz
I
C
= 鈥?A, I
B1
= 鈥?mA, I
B2
= 7mA,
V
CC
= 鈥?0V
20
1.0
1.5
1.2
鈥?40
2000
5000
30000
鈥?.5
鈥?.0
V
V
MHz
碌s
碌s
碌s
min
typ
max
鈥?00
鈥?00
鈥?00
Unit
碌A
碌A
碌A
V
FE2
Rank classification
Q
S
P
5000 to 15000 7000 to 21000 8000 to 30000
Rank
h
FE2
2.0
1.5
3.0
1
1
2
3
