Transistor
2SB1473
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to2SD2225
6.9鹵0.1
0.15
Unit: mm
1.05 2.5鹵0.1
鹵0.05
(1.45)
0.8
0.5
4.5鹵0.1
0.45
鈥?.05
2.5鹵0.1
0.7
4.0
s
Features
q
q
q
q
0.45
鈥?.05
+0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
鈥?20
鈥?20
鈥?
鈥?
鈥?0.5
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
+0.1
(Ta=25藲C)
2.5鹵0.5
2.5鹵0.5
(HW type)
s
Electrical Characteristics
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 鈥?.1mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?50mA
V
CE
= 鈥?V, I
C
= 鈥?00mA
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
V
CB
= 鈥?0V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
*2
min
鈥?20
鈥?
90
50
typ
max
14.5鹵0.5
High collector to emitter voltage V
CEO
.
Satisfactory linearity of forward current transfer ratio h
FE
.
High transition frequency f
T
.
Allowing supply with the radial taping.
0.65 max.
1.0 1.0
0.2
Unit
V
V
330
鈥?.0
鈥?.2
250
30
V
V
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
90 ~ 155
R
130 ~ 220
S
185 ~ 330
h
FE1
1
1
2
