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2SB1470 Datasheet

  • 2SB1470

  • For Power Amplification

  • 85.20KB

  • 4頁

  • PANASONIC

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Power Transistors
2SB1470
Silicon PNP triple diffusion planar type darlington
Unit: mm
For power amplification
Complementary to 2SD2222
鈻?/div>
Features
鈥?/div>
Optimum for 120 W HiFi output
鈥?/div>
High forward current transfer ratio h
FE
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
26.0
鹵0.5
(10.0) (6.0)
(2.0)
(4.0)
20.0
鹵0.5
蠁
3.3
鹵0.2
5.0
鹵0.3
(3.0)
(3.0)
(1.5)
(1.5)
2.0
鹵0.3
3.0
鹵0.3
1.0
鹵0.2
0.6
鹵0.2
5.45
鹵0.3
(1.5)
2.7
鹵0.3
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25擄C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
鈭?60
鈭?60
鈭?
鈭?
鈭?5
150
3.5
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
W
B
1
2
10.9
鹵0.5
20.0
鹵0.5
(2.5)
Solder Dip
3
1: Base
2: Collector
3: Emitter
TOP-3L-A1 Package
Internal Connection
C
E
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
= 鈭?0
mA, I
B
=
0
V
CB
= 鈭?60
V, I
E
=
0
V
CE
= 鈭?60
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?
mA
I
C
= 鈭?
A, I
B
= 鈭?
mA
V
CE
= 鈭?0
V, I
C
= 鈭?/div>
0.5 A, f
=
1 MHz
I
C
= 鈭?
A, I
B1
= 鈭?
mA, I
B2
=
7 mA
V
CC
= 鈭?0
V
20
1.0
1.5
1.2
1 000
3 500
20 000
鈭?
鈭?
V
V
MHz
碌s
碌s
碌s
Min
鈭?60
鈭?00
鈭?00
鈭?00
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
Q
S
P
3 500 to 10 000 5 000 to 15 000 7 000 to 20 000
(2.0)
Publication date: March 2003
SJD00076BED
1

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