Transistor
2SB1462
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD2216
1.6鹵0.15
Unit: mm
s
Features
q
q
0.4
0.8鹵0.1
0.4
High foward current transfer ratio h
FE
.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
(Ta=25藲C)
1.6鹵0.1
1.0鹵0.1
0.5
1
0.5
3
2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
0.45鹵0.1 0.3
0.75鹵0.15
Ratings
鈥?0
鈥?0
鈥?
鈥?00
鈥?00
125
125
鈥?5 ~ +125
Unit
V
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?5
SS-Mini Type Package
Marking symbol :
A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?00碌A(chǔ), I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
V
CB
= 鈥?0V, I
E
= 1mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
鈥?0
鈥?0
鈥?
160
鈥?0.11
80
2.7
460
鈥?0.3
V
MHz
pF
min
typ
max
鈥?0.1
鈥?00
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
Q
160 ~ 260
AQ
R
210 ~ 340
AR
S
290 ~ 460
AS
0 to 0.1
0.2鹵0.1
0.15
鈥?.05
+0.1
0.2
鈥?.05
+0.1
1
1
2
3
