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2SB1430 Datasheet

  • 2SB1430

  • PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR...

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  • 6頁(yè)

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DATA SHEET
SILICON POWER TRANSISTOR
2SB1430
PNP SILICON
EPITAXIAL
TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SB1430 is a Darlington power transistor that can directly
drive from the IC output. This transistor is ideal for motor drivers
and solenoid drivers in such as OA and FA equipment.
In addition, this transistor features a small resin-molded
insulation type package, thus contributing to high-density mounting
and mounting cost reduction.
PACKAGE DRAWING (UNIT: mm)
FEATURES
鈥?High h
FE
due to Darlington connection:
h
FE
鈮?/div>
2,000 (V
CE
= 2 V, I
C
= 2 A)
鈥?Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
擄
Electrode Connection
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(T
C
= 25擄C)
P
T
(T
A
= 25擄C)
T
j
T
stg
Ratings
鈭?00
鈭?00
鈭?.0
鈭?.0
鈭?0
鈭?.5
20
2.0
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
W
擄C
擄C
1. Base
2. Collector
3. Emitter
EQUIVALENT CIRCUIT
* PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13660EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998

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