2SB1427
Transistors
Power transistor (鈭?0V,
鈭?A)
2SB1427
!
Features
1) Low saturation voltage,
typically V
CE(sat)
=
鈭?.5V
at I
C
/I
B
=
鈭?A
/
鈭?0mA.
2) Excellent DC current gain characteristics.
!
External dimensions
(Units : mm)
4.0
1.0
2.5
0.5
1.5
0.4
(1)
3.0
0.5
(3)
4.5
1.6
(2)
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
ROHM : MPT3
EIAJ : SC-62
!
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
鈭?0
鈭?0
鈭?
鈭?
鈭?
0.5
2
150
鈭?5
~
+150
Unit
V
V
V
A(DC)
A(Pulse)
W
擄C
擄C
鈭?
鈭?
鈭?
Single pulse, Pw=10ms
鈭?
When mounted on a 40脳40脳0.7mm ceramic board.
!
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
鈭?/div>
Denotes h
FE
2SB1427
MPT3
E
BJ
T100
1000
鈭?/div>
!
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
鈭?/div>
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
鈭?0
鈭?0
鈭?
鈭?/div>
鈭?/div>
鈭?/div>
390
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
90
30
Max.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?.5
鈭?.5
鈭?.5
820
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
鈭?/div>
MHz
pF
I
C
= 鈭?0碌A(chǔ)
I
C
= 鈭?mA
I
E
= 鈭?0碌A(chǔ)
V
CB
= 鈭?6V
Conditions
V
EB
= 鈭?V
I
C
/I
B
= 鈭?A/鈭?00mA
V
CE
/I
C
= 鈭?V/鈭?.5A
V
CE
= 鈭?0V
, I
E
=
10mA , f= 30MHz
V
CB
= 鈭?0V
, I
E
=
0A , f
=
1MHz
0.4
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