Power Transistors
2SB1362
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2053
15.0鹵0.5
4.0鹵0.1
4.0鹵0.1
Unit: mm
4.5鹵0.2
s
Features
q
q
q
13.0鹵0.5
10.5鹵0.5
15.0鹵0.2
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
Wide area of safe operation (ASO)
High transition frequency f
T
(T
C
=25藲C)
Ratings
鈥?50
鈥?50
鈥?
鈥?5
鈥?
100
2.5
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
2.0鹵0.1
20.0鹵0.3
19.0鹵0.3
蠁3.2鹵0.1
16.2鹵0.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
3.5
2.0鹵0.2
1.1鹵0.1
1.4鹵0.3
12.5
5.45鹵0.3
10.9鹵0.5
1
2
3
0.6鹵0.2
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?5(a)
TOP鈥? Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
h
FE1
h
FE2*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?50V, I
E
= 0
V
EB
= 鈥?V, I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?0mA
V
CE
= 鈥?V, I
C
= 鈥?A
V
CE
= 鈥?V, I
C
= 鈥?A
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?A, I
B
= 鈥?0.7A
V
CE
= 鈥?V, I
C
= 鈥?0.5A, f = 1MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
15
270
20
60
20
鈥?.8
鈥?.0
V
V
MHz
pF
200
min
typ
max
鈥?0
鈥?0
Unit
碌A(chǔ)
碌A(chǔ)
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE2
Rank classification
Q
60 to 120
S
80 to 160
P
100 to 200
Rank
h
FE2
1
1
2
3
