Transistor
2SB1221
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC3941
Unit: mm
5.0鹵0.2
4.0鹵0.2
q
q
Low collector to emitter saturation voltage V
CE(sat)
.
Allowing supply with the radial taping.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?50
鈥?00
鈥?
鈥?00
鈥?0
1
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
W
藲C
藲C
1 2 3
2.54鹵0.15
1.27
0.45
鈥?.1
1.27
+0.15
13.5鹵0.5
0.7鹵0.1
0.7鹵0.2
8.0鹵0.2
s
Features
0.45
鈥?.1
+0.15
2.3鹵0.2
1:Emitter
2:Collector
3:Base
TO鈥?2NL Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?2V, I
E
= 0
I
C
= 鈥?00碌A(chǔ), I
B
= 0
I
E
= 鈥?碌A(chǔ), I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 10mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
50
80
5
10
鈥?00
鈥?
60
220
鈥?.5
V
MHz
pF
min
typ
max
鈥?
Unit
碌A(chǔ)
V
V
*
h
FE
Rank classification
Q
60 ~ 150
R
100 ~ 220
h
FE
Rank
1
1
2
3
