Transistor
2SB1209
Silicon PNP triple diffusion planer type
For low-frequency amplification
Unit: mm
6.9鹵0.1
1.5
2.5鹵0.1
1.0
s
q
q
q
Features
High collector to base voltage V
CBO
.
High collector to emitter voltage V
CEO
.
Low collector to emitter saturation voltage V
CE(sat)
.
1.5 R0.9
R0.9
0.4
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
1.0
0.45鹵0.05
1
1.0鹵0.1
R
0.
0.85
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
鈥?00
鈥?00
鈥?
鈥?00
鈥?00
1
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
W
藲C
藲C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
EIAJ:SC鈥?1
M Type Mold Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 鈥?00碌A(chǔ), I
E
= 0
I
C
= 鈥?00碌A(chǔ), I
B
= 0
I
E
= 鈥?00碌A(chǔ), I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?0mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 20mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
50
9
min
鈥?00
鈥?00
鈥?
40
鈥?0.6
鈥?.5
V
V
MHz
pF
typ
max
Unit
V
V
V
1.25鹵0.05
s
Absolute Maximum Ratings
(Ta=25藲C)
0.55鹵0.1
4.1鹵0.2
4.5鹵0.1
7
1
1
2
