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2SB1193 Datasheet

  • 2SB1193

  • For Midium-Speed Power Switching

  • 3頁

  • PANASONIC

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Power Transistors
2SB1193
Silicon PNP epitaxial planar type darlington
Unit: mm
0.7
鹵0.1
For midium-speed power switching
Complementary to 2SD1773
16.7
鹵0.3
10.0
鹵0.2
5.5
鹵0.2
4.2
鹵0.2
2.7
鹵0.2
鈻?/div>
Features
鈥?/div>
High forward current transfer ratio h
FE
鈥?/div>
High-speed switching
鈥?/div>
Full-pack package which can be installed to the heat sink with one screw
7.5
鹵0.2
蠁
3.1
鹵0.1
4.2
鹵0.2
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25擄C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
鈭?20
鈭?20
鈭?
鈭?
鈭?2
50
2
150
鈭?5 鈭?+150
擄C
擄C
Unit
V
V
V
A
A
W
Solder Dip
(4.0)
1.4
鹵0.1
1.3
鹵0.2
0.5
+0.2
鈥?.1
14.0
鹵0.5
0.8
鹵0.1
2.54
鹵0.3
5.08
鹵0.5
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter sustaining voltage
*
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Symbol
Conditions
I
E
= 鈭?0
mA, I
C
=
0
V
CB
= 鈭?20
V, I
E
=
0
V
CE
= 鈭?00
V, I
B
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?
mA
I
C
= 鈭?
A, I
B
= 鈭?0
mA
I
C
= 鈭?
A, I
B
= 鈭?
mA
I
C
= 鈭?
A, I
B
= 鈭?0
mA
V
CE
= 鈭?0
V, I
C
= 鈭?/div>
0.5 A, f
=
1 MHz
I
C
= 鈭?
A, I
B1
= 鈭?
mA, I
B2
=
8 mA
V
CC
= 鈭?0
V
15
0.7
3.5
2.0
1 000
Min
鈭?20
鈭?
鈭?00
鈭?0
20 000
鈭?.5
鈭?.0
鈭?.0
鈭?.5
Typ
Max
V
CEO(SUS)
I
C
= 鈭?
A, L
=
10 mH
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)1
V
CE(sat)2
Base-emitter saturation voltage
V
BE(sat)1
V
BE(sat)2
Transition frequency
Turn-on time
Storage time
Fall time
f
T
t
on
t
stg
t
f
E
Unit
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
V
MHz
碌s
碌s
碌s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: V
CEO(SUS)
test circuit
50 Hz/60 Hz
X
mercury relay
L
120
鈩?/div>
6V
Publication date: February 2003
Y
1
鈩?/div>
15 V
SJD00059AED
G
1

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