Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
2SB1184 / 2SB1243
Transistors
Power Transistor (鈭?0V,
鈭?A)
2SB1184 / 2SB1243
!
Features
1) Low V
CE(sat)
.
V
CE(sat)
= -0.5V (Typ.)
(I
C
/I
B
= -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.
!
External dimensions
(Units : mm)
2SB1184
1.5鹵0.3
2SB1243
C0.5
2.3
+0.2
鈭?.1
0.5鹵0.1
4.4
鹵
0.2
14.5
鹵
0.5
0.9
6.5鹵0.2
5.1
+0.2
鈭?.1
6.8
鹵
0.2
2.5
鹵
0.2
5.5
+0.3
鈭?.1
9.5鹵0.5
0.9
1.5
2.5
0.75
0.9
0.65鹵0.1
0.65Max.
0.55鹵0.1
!
Structure
Epitaxial planar type
PNP silicon transistor
0.5
鹵
0.1
(1)
(2)
(3)
2.3鹵0.2 2.3鹵0.2
1.0鹵0.2
2.54 2.54
1.0
(1) (2) (3)
1.05
0.45
鹵
0.1
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM :
ATV
(1) Emitter
(2) Collector
(3) Base
!
Absolute maximum ratings
(Ta=25擄C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
鈭?0
鈭?0
鈭?
鈭?
鈭?.5
1
15
1
Tj
Tstg
150
鈭?5~+150
Unit
V
V
V
A (DC)
A (Pulse)
W
W (T
C
=25擄C)
W
擄C
擄C
鈭?
鈭?
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
2SB1184
dissipation
2SB1243
Junction temperature
Storage temperature
I
CP
P
C
鈭?/div>
1 Single pulse, Pw=100ms
鈭?/div>
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
1/3
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