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2SB1179A Datasheet

  • 2SB1179A

  • For Power Amplification And Switching

  • 3頁(yè)

  • PANASONIC

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Power Transistors
2SB1179, 2SB1179A
Silicon PNP epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1749, 2SD1749A
鈻?/div>
Features
鈥?/div>
High forward current transfer ratio h
FE
which has satisfactory linearity
鈥?/div>
High-speed switching
鈥?/div>
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
12.6
鹵0.3
7.2
鹵0.3
Unit: mm
7.0
鹵0.3
3.0
鹵0.2
2.0
鹵0.2
3.5
鹵0.2
0藲 to 0.15藲
2.5
鹵0.2
(1.0)
(1.0)
1.1
鹵0.1
1.0
鹵0.2
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage
(Emitter open)
2SB1179
2SB1179A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
T
a
=
25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
Rating
鈭?0
鈭?0
鈭?0
鈭?0
鈭?
鈭?
鈭?
15
1.3
150
鈭?5
to
+150
擄C
擄C
V
A
A
W
V
Unit
V
0.75
鹵0.1
0.4
鹵0.1
2.3
鹵0.2
4.6
鹵0.4
1
2
3
0.9
鹵0.1
0藲 to 0.15藲
Collector-emitter voltage 2SB1179
(Base open)
2SB1179A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
Collector-emitter cutoff
current (Base open)
2SB1179
2SB1179A
2SB1179
2SB1179A
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CEO
2SB1179
2SB1179A
V
BE
I
CBO
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CB
= 鈭?0
V, I
E
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?/div>
0.5 A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?2
mA
I
C
= 鈭?
A, I
B
= 鈭?0
mA
V
CE
= 鈭?0
V, I
C
= 鈭?/div>
0.5 A, f
=
1 MHz
I
C
= 鈭?
A, I
B1
= 鈭?2
mA, I
B2
=
12 mA
V
CC
= 鈭?0
V
20
0.3
2.0
0.5
1 000
2 000
Symbol
V
CEO
Conditions
I
C
= 鈭?0
mA, I
B
=
0
Min
鈭?0
鈭?0
Typ
E
Max
Unit
V
鈭?.5
鈭?00
鈭?00
鈭?00
鈭?00
鈭?
10 000
鈭?
鈭?
MHz
碌s
碌s
碌s
V
mA
錚?/div>
碌A(chǔ)
V
碌A(chǔ)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
h
FE2
Publication date: February 2003
2 000 to 5 000 4 000 to 10 000
SJD00055AED
2.5
鹵0.2
1

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