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2SB1169A Datasheet

  • 2SB1169A

  • For Power Amplification

  • 3頁

  • PANASONIC

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上傳產品規(guī)格書

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Power Transistors
2SB1169, 2SB1169A
Silicon PNP epitaxial planar type
For power amplification
Unit : mm
鈻?/div>
Features
鈥?/div>
High forward current transfer ratio h
FE
which has satisfactory linearity
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
鈥?/div>
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
7.0
鹵0.3
3.0
鹵0.2
2.0
鹵0.2
3.5
鹵0.2
0藲 to 0.15藲
2.5
鹵0.2
(1.0)
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage
(Emitter open)
2SB1169
2SB1169A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
T
a
=
25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
Rating
鈭?0
鈭?0
鈭?0
鈭?0
鈭?
鈭?
鈭?
15
1.3
150
鈭?5 鈭?+150
擄C
擄C
V
A
A
W
V
Unit
V
12.6
鹵0.3
7.2
鹵0.3
(1.0)
1.1
鹵0.1
1.0
鹵0.2
0.75
鹵0.1
0.4
鹵0.1
2.3
鹵0.2
4.6
鹵0.4
1
2
3
0.9
鹵0.1
0藲 to 0.15藲
Collector-emitter voltage 2SB1169
(Base open)
2SB1169A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-emitter cutoff
current (E-B short)
Collector-emitter cutoff
current (Base open)
2SB1169
2SB1169A
2SB1169
2SB1169A
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Strage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CEO
2SB1169
2SB1169A
V
BE
I
CES
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?0
V, V
BE
=
0
V
CE
= 鈭?0
V, V
BE
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?/div>
0.2 A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.125 A
V
CE
= 鈭?0
V, I
C
= 鈭?/div>
0.5 A, f
=
10 MHz
I
C
= 鈭?
A, I
B1
= 鈭?0
mA, I
B2
=
50 mA
V
CC
= 鈭?0
V
40
0.5
1.2
0.3
40
15
鈭?
V
MHz
碌s
碌s
碌s
Symbol
V
CEO
Conditions
I
C
= 鈭?0
mA, I
B
=
0
Min
鈭?0
鈭?0
鈭?.3
鈭?00
鈭?00
鈭?00
鈭?00
鈭?
450
mA
錚?/div>
碌A
V
碌A
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Publication date: April 2003
R
40 to 90
Q
70 to 150
P
120 to 250
SJD00045AED
O
200 to 450
2.5
鹵0.2
1

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