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2SB1070 Datasheet

  • 2SB1070

  • For Low-Voltage Switching

  • 83.86KB

  • 4頁(yè)

  • PANASONIC

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Power Transistors
2SB1070, 2SB1070A
Silicon PNP epitaxial planar type
For low-voltage switching
8.5
鹵0.2
Unit: mm
3.4
鹵0.3
1.0
鹵0.1
6.0
鹵0.2
10.0
鹵0.3
1.5
鹵0.1
鈻?/div>
Features
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
鈥?/div>
High-speed switching
鈥?/div>
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
4.4
鹵0.5
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage
(Emitter open)
2SB1070
2SB1070A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
T
a
=
25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
Rating
鈭?0
鈭?0
鈭?0
鈭?0
鈭?
鈭?
鈭?
25
1.3
150
鈭?5
to
+150
擄C
擄C
V
A
A
W
V
Unit
V
Collector-emitter voltage 2SB1070
(Base open)
2SB1070A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
2SB1070
2SB1070A
2SB1070
2SB1070A
I
EBO
h
FE1
h
FE2 *
Base-emitter saturation voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
BE(sat)
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CBO
V
CB
= 鈭?0
V, I
E
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?/div>
0.1 A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.1 A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.1 A
V
CE
= 鈭?
V, I
C
= 鈭?/div>
0.5 A, f
=
10 MHz
I
C
= 鈭?
A
I
B1
= 鈭?/div>
0.2 A, I
B2
=
0.2 A
V
CC
= 鈭?0
V
150
0.3
0.4
0.1
45
90
260
鈭?.5
鈭?/div>
0.5
V
V
MHz
碌s
碌s
碌s
Symbol
V
CEO
Conditions
I
C
= 鈭?0
mA, I
B
=
0
Min
鈭?0
鈭?0
鈭?0
鈭?0
鈭?0
碌A(chǔ)
錚?/div>
碌A(chǔ)
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
Q
90 to 180
P
130 to 260
(7.6)
(1.5)
1
2
0.8
鹵0.1
R = 0.5
R = 0.5
2.54
鹵0.3
1.0
鹵0.1
1.4
鹵0.1
0.4
鹵0.1
5.08
鹵0.5
(8.5)
(6.0)
1.3
3
2.0
鹵0.5
4.4
鹵0.5
0 to 0.4
14.4
鹵0.5
3.0
+0.4
鈥?.2
1.5
+0
鈥?.4
Publication date: February 2003
SJD00040AED
1

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