Transistor
2SB0970
(2SB970)
Silicon PNP epitaxial planer type
For low-voltage output amplification
Unit: mm
0.40
+0.10
帽0.05
0.16
+0.10
-0.06
1.50
+0.25
-0.05
s
q
q
Features
Low collector to emitter saturation voltage V
CE(sat)
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
3
2.8
+0.2
-0.3
1
2
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
-0.05
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?5
鈥?0
鈥?
鈥?
鈥?0.5
200
150
鈥?5 ~ +150
Unit
V
V
V
A
A
mW
藲C
藲C
10擄
1.1
+0.2
-0.1
(0.65)
1:Base
2:Emitter
3:Collector
0 to 0.1
1.1
+0.3
-0.1
EIAJ:SC鈥?9
Mini3-G1 Package
Marking symbol :
1R
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?0V, I
E
= 0
I
C
= 鈥?0碌A, I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A, I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?.5A
*2
V
CE
= 鈥?V, I
C
= 鈥?A
*2
I
C
= 鈥?.4A, I
B
= 鈥?mA
I
C
= 鈥?.4A, I
B
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
鈥?5
鈥?0
鈥?
130
60
鈥?0.16
鈥?0.8
130
22
*2
min
typ
max
鈥?00
Unit
nA
V
V
V
350
鈥?0.3
鈥?.2
V
V
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
Rank
h
FE1
R
130 ~ 220
1RR
S
180 ~ 350
1RS
Note.) The Part number in the Parenthesis shows conventional
part number.
Marking Symbol
214
0.4
鹵0.2
5擄
1
2
3
