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2SB0938A Datasheet

  • 2SB0938A

  • For Power Amplification And Switching

  • 3頁

  • PANASONIC

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Power Transistors
2SB0938
(2SB938)
, 2SB0938A
(2SB938A)
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1261, 2SD1261A
鈻?/div>
Features
鈥?/div>
High forward current transfer ratio h
FE
鈥?/div>
High-speed switching
鈥?/div>
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
10.0
鹵0.3
1.5
鹵0.1
Unit: mm
8.5
鹵0.2
6.0
鹵0.2
3.4
鹵0.3
1.0
鹵0.1
4.4
鹵0.5
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage
(Emitter open)
2SB0938
2SB0938A
V
CEO
V
EBO
I
C
I
CP
P
C
T
a
=
25擄C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
Rating
鈭?0
鈭?0
鈭?0
鈭?0
鈭?
鈭?
鈭?
40
1.3
150
鈭?5
to
+150
擄C
擄C
V
A
A
W
V
Unit
V
(6.5)
Collector-emitter voltage 2SB0938
(Base open)
2SB0938A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
Collector-emitter cutoff
current (Base open)
2SB0938
2SB0938A
2SB0938
2SB09378
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CEO
2SB0938
2SB0938A
V
BE
I
CBO
V
CE
=
鈭?
V,I
C
=
鈭?
A
V
CB
=
鈭?0
V,I
E
= 0
V
CB
=
鈭?0
V,I
E
= 0
V
CE
=
鈭?0
V,I
B
= 0
V
CE
=
鈭?0
V,I
B
= 0
V
EB
=
鈭?
V,I
C
= 0
V
CE
= 鈭?
V, I
C
= 鈭?.5
A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?2
mA
I
C
= 鈭?
A, I
B
= 鈭?0
mA
Transition frequency
Turn-on time
Strage time
Fall time
V
CE
= 鈭?0
V, I
C
= 鈭?.5
A, f
=
1 MHz
I
C
= 鈭?
A,
I
B1
= 鈭?2
mA, I
B2
= 12
mA
V
CC
= 鈭?0
V
15
0.3
2
0.5
1 000
2 000
Symbol
V
CEO
Conditions
I
C
= 鈭?0
mA, I
B
=
0
Min
鈭?0
鈭?0
Typ
E
Max
Unit
V
鈭?.5
鈭?00
鈭?00
鈭?00
鈭?00
鈭?
10 000
鈭?
鈭?
MHz
碌s
碌s
碌s
V
mA
錚?/div>
碌A(chǔ)
(7.6)
V
碌A(chǔ)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Publication date: March 2003
Q
P
Note) The part number in the parenthesis shows conventional part number.
2 000 to 5 000 4 000 to 10 000
(1.5)
1
2
0.8
鹵0.1
R = 0.5
R = 0.5
2.54
鹵0.3
1.0
鹵0.1
1.4
鹵0.1
0.4
鹵0.1
5.08
鹵0.5
(8.5)
(6.0)
1.3
3
2.0
鹵0.5
4.4
鹵0.5
0 to 0.4
14.4
鹵0.5
3.0
+0.4
鈥?.2
1.5
+0
鈥?.4
SJD00019BED
1

2SB0938A相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
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    Silicon PNP epitaxial planer type
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    Silicon PNP epitaxial planar type
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    Silicon PNP epitaxial planar type
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  • 英文版
    For low-frequency general amplification
    PANASONIC
  • 英文版
    For low-frequency general amplification
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  • 英文版
    For low-frequency general amplification
    PANASONIC
  • 英文版
    For low-frequency general amplification
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
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    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type
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  • 英文版
    For general amplification
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  • 英文版
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  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency and low-...
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  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency and low-...
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  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency output a...
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  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency output a...
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency amplific...
    PANASONIC

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