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2SB0932 Datasheet

  • 2SB0932

  • For Power Switching

  • 4頁

  • PANASONIC

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上傳產(chǎn)品規(guī)格書

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Power Transistors
2SB0932
(2SB932)
Silicon PNP epitaxial planar type
For Power switching
8.5
鹵0.2
6.0
鹵0.2
3.4
鹵0.3
1.0
鹵0.1
Unit: mm
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
鈥?/div>
Satisfactory linearity of forward current transfer ratio h
FE
鈥?/div>
Large collector current I
C
鈥?/div>
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
10.0
鹵0.3
1.5
鹵0.1
鈻?/div>
Features
4.4
鹵0.5
2.0
鹵0.5
2.54
鹵0.3
1.4
鹵0.1
5.08
鹵0.5
1
2
3
0.8
鹵0.1
R = 0.5
R = 0.5
1.0
鹵0.1
0.4
鹵0.1
(8.5)
(6.0)
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
鈭?30
鈭?0
鈭?
鈭?
鈭?
35
1.3
150
鈭?5
to
+150
Unit
V
(6.5)
V
V
A
A
W
擄C
擄C
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
3擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
h
FE2 *
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
2. *: Rank classification
Rank
h
FE2
Q
90 to 180
P
130 to 260
V
BE(sat)
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
= 鈭?0
mA, I
B
=
0
V
CB
= 鈭?00
V, I
E
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?/div>
0.1 A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.15 A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.15 A
V
CE
= 鈭?0
V, I
C
= 鈭?/div>
0.5 A, f
=
10 MHz
I
C
= 鈭?
A,
I
B1
= 鈭?/div>
0.1 A, I
B2
=
0.1 A
V
CC
= 鈭?0
V
30
0.15
0.8
0.15
45
90
260
鈭?.5
鈭?/div>
0.5
V
V
MHz
碌s
碌s
碌s
Min
鈭?0
鈭?0
鈭?0
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJD00014BED
(7.6)
(1.5)
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
4.4
鹵0.5
1.3
0 to 0.4
14.4
鹵0.5
3.0
+0.4
鈥?.2
1.5
+0
鈥?.4
1

2SB0932相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
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  • 英文版
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    For low-frequency general amplification
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    For low-frequency general amplification
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  • 英文版
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  • 英文版
    Silicon PNP epitaxial planar type
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  • 英文版
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    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type
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  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency and low-...
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  • 英文版
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  • 英文版
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  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency amplific...
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