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2SB0929A Datasheet

  • 2SB0929A

  • For Power Amplification

  • 76.58KB

  • 3頁

  • PANASONIC

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Power Transistors
2SB0929
(2SB929)
, 2SB0929A
(2SB929A)
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1252, 2SD1252A
8.5
鹵0.2
Unit: mm
3.4
鹵0.3
1.0
鹵0.1
6.0
鹵0.2
10.0
鹵0.3
1.5
鹵0.1
鈻?/div>
Features
鈥?/div>
High forward current transfer ratio h
FE
which has satisfactory linearity
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
鈥?/div>
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
4.4
鹵0.5
Parameter
Collector-base voltage
(Emitter open)
2SB0929
2SB0929A
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
T
a
=
25擄C
Rating
鈭?0
鈭?0
鈭?0
鈭?0
鈭?
鈭?
鈭?
35
1.3
150
鈭?5
to
+150
Unit
V
1
2
2.0
鹵0.5
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Collector-emitter voltage 2SB0929
(Base open)
2SB0929A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
V
(6.5)
V
A
A
W
擄C
擄C
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Junction temperature
Storage temperature
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
Collector-emitter cutoff
current (E-B short)
Collector-emitter cutoff
current (Base open)
2SB0929
2SB0929A
2SB0929
2SB0929A
2SB0929
2SB0929A
I
EBO
h
FE1 *
h
FE2
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Strage time
Fall time
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CEO
I
CES
V
CE
=
鈭?0
V, V
BE
= 0
V
CE
=
鈭?0
V, V
BE
= 0
V
CE
=
鈭?0
V, I
B
= 0
V
CE
=
鈭?0
V, I
B
= 0
V
EB
=
鈭?
V, I
C
= 0
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
=
鈭?
V, I
C
=
鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?.375
A
V
CE
= 鈭?0
V, I
C
= 鈭?/div>
0.5 A, f
=
10 MHz
I
C
= 鈭?
A,
I
B1
= 鈭?/div>
0.1 A, I
B2
= 0.1
A
V
CC
= 鈭?0
V
30
0.5
1.2
0.3
70
10
鈭?.8
鈭?.2
V
V
MHz
碌s
碌s
碌s
Symbol
V
CEO
Conditions
I
C
= 鈭?0
mA, I
B
=
0
Min
鈭?0
鈭?0
鈭?00
鈭?00
鈭?00
鈭?00
鈭?
250
mA
錚?/div>
碌A(chǔ)
碌A(chǔ)
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Publication date: April 2003
Q
70 to 150
P
120 to 250
Note) The part number in the parenthesis shows conventional part number.
SJD00011BED
(7.6)
(1.5)
0.8
鹵0.1
R = 0.5
R = 0.5
2.54
鹵0.3
1.0
鹵0.1
1.4
鹵0.1
0.4
鹵0.1
5.08
鹵0.5
(8.5)
(6.0)
1.3
3
4.4
鹵0.5
0 to 0.4
14.4
鹵0.5
3.0
+0.4
鈥?.2
1.5
+0
鈥?.4
1

2SB0929A相關(guān)型號PDF文件下載

  • 型號
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    廠商
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    Silicon PNP epitaxial planer type(For low-frequency output a...
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  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
  • 英文版
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    Silicon PNP epitaxial planer type(For low-frequency amplific...
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