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2SB0928A Datasheet

  • 2SB0928A

  • For Power Amplification

  • 3頁(yè)

  • PANASONIC

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Power Transistors
2SB0928
(2SB928)
, 2SB0928A
(2SB928A)
Silicon PNP epitaxial planar type
For Power amplification
For TV vertical deflection output
Complementary to 2SD1250 and 2SD1250A
鈻?/div>
Features
鈥?/div>
High collector-emitter voltage (Base open) V
CEO
鈥?/div>
High collector power dissipation P
C
鈥?/div>
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
8.5
鹵0.2
6.0
鹵0.2
Unit : mm
3.4
鹵0.3
1.0
鹵0.1
10.0
鹵0.3
1.5
鹵0.1
4.4
鹵0.5
2.0
鹵0.5
2.54
鹵0.3
1.4
鹵0.1
5.08
鹵0.5
1
2
3
0.8
鹵0.1
R = 0.5
R = 0.5
1.0
鹵0.1
0.4
鹵0.1
(8.5)
(6.0)
4.4
鹵0.5
0 to 0.4
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SB0928
(Base open)
2SB0928A
V
EBO
I
C
I
CP
P
C
T
a
=
25擄C
T
j
T
stg
Symbol
V
CBO
V
CEO
Rating
鈭?00
鈭?50
鈭?80
鈭?
鈭?
鈭?
30
1.3
150
鈭?5 鈭?+150
擄C
擄C
V
A
A
W
Unit
V
V
(6.5)
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
Note) Self-supported type package is also prepared
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage
(Base open)
2SB0928
2SB0928A
V
EBO
I
CBO
I
EBO
h
FE1 *
h
FE2
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
V
BE
V
CE(sat)
f
T
I
E
= 鈭?00 碌A(chǔ),
I
C
=
0
V
CB
= 鈭?00
V, I
E
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?50
mA
V
CE
= 鈭?0
V, I
C
= 鈭?00
mA
V
CE
= 鈭?0
V, I
C
= 鈭?00
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
V
CE
= 鈭?0
V, I
C
= 鈭?/div>
0.5 A, f
=
10 MHz
40
60
50
鈭?.0
鈭?.0
V
V
MHz
Symbol
V
CBO
V
CEO
Conditions
I
C
= 鈭?00 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
Min
鈭?00
鈭?50
鈭?80
鈭?
鈭?0
鈭?0
240
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
Typ
Max
Unit
V
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
60 to 140
P
100 to 240
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00010BED
(7.6)
(1.5)
1.3
14.4
鹵0.5
3.0
+0.4
鈥?.2
1.5
+0
鈥?.4
1

2SB0928A相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    For low-frequency general amplification
    PANASONIC
  • 英文版
    For low-frequency general amplification
    PANASONIC ...
  • 英文版
    For low-frequency general amplification
    PANASONIC
  • 英文版
    For low-frequency general amplification
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    For general amplification
    PANASONIC
  • 英文版
    For general amplification
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency and low-...
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency and low-...
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency output a...
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency output a...
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency amplific...
    PANASONIC

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