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2SB0819 Datasheet

  • 2SB0819

  • For Low-Frequency Output Amplification

  • 82.51KB

  • 4頁(yè)

  • PANASONIC

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Transistors
2SB0819
(2SB819)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1051
(0.4)
Unit: mm
6.9
鹵0.1
(1.5)
(1.5)
3.5
鹵0.1
2.5
鹵0.1
(1.0)
(1.0)
2.0
鹵0.2
2.4
鹵0.2
1.0
鹵0.1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
鈭?0
鈭?0
鈭?
鈭?.5
鈭?
1
150
鈭?5
to
+150
Unit
V
V
V
A
A
W
擄C
擄C
3
(2.5)
2
(2.5)
1
1.25
鹵0.05
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
(0.85)
0.55
鹵0.1
0.45
鹵0.05
1: Base
2: Collector
3: Emitter
M-A1 Package
Note) *: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
*1
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 鈭?
mA, I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?.5
A, I
B
= 鈭?/div>
0.15 A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.2 A
V
CB
= 鈭?
V, I
E
=
0.5 A, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
Min
鈭?0
鈭?0
Typ
Max
Unit
V
V
鈭?
鈭?00
鈭?0
80
220
鈭?
鈭?.5
150
45
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
V
MHz
pF
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
*1
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
80 to 160
R
120 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00059BED
4.1
鹵0.2
鈥?/div>
High collector-emitter voltage (Base open) V
CEO
鈥?/div>
Large collctor power dissipation P
C
鈥?/div>
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R 0.9
R 0.7
4.5
鹵0.1
鈻?/div>
Features
1

2SB0819相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    For low-frequency general amplification
    PANASONIC
  • 英文版
    For low-frequency general amplification
    PANASONIC ...
  • 英文版
    For low-frequency general amplification
    PANASONIC
  • 英文版
    For low-frequency general amplification
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    For general amplification
    PANASONIC
  • 英文版
    For general amplification
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency and low-...
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency and low-...
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency output a...
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency output a...
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency amplific...
    PANASONIC

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