Transistor
2SB0792, 2SB0792A
(2SB792, 2SB792A)
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD0814 (2SD814)
0.40
+0.10
帽0.05
Unit: mm
0.16
+0.10
-0.06
s
Features
q
q
q
3
High collector to emitter voltage V
CEO
.
Low noise voltage NV.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25藲C)
Ratings
鈥?50
鈥?85
鈥?50
鈥?85
鈥?
鈥?00
鈥?0
200
150
鈥?5 ~ +150
Unit
V
10擄
1.50
+0.25
-0.05
2.8
+0.2
-0.3
1
2
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
-0.05
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB0792
2SB0792A
2SB0792
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1.1
+0.2
-0.1
(0.65)
emitter voltage 2SB0792A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
0 to 0.1
1.1
+0.3
-0.1
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini3-G1 Package
Marking symbol :
I
(2SB0792)
2F
(2SB0792A)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter
voltage
2SB0792
2SB0792A
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= 鈥?00V, I
E
= 0
I
C
= 鈥?00碌A(chǔ), I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?0mA
I
C
= 鈥?0碌A(chǔ), I
B
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 10mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
V
CE
= 鈥?0V, I
C
= 鈥?mA, G
V
= 80dB,
R
g
= 100k鈩? Function = FLAT
200
4
150
鈥?50
鈥?85
鈥?
130
130
450
330
鈥?
V
MHz
pF
mV
min
typ
max
鈥?
Unit
碌A(chǔ)
V
V
Emitter to base voltage
Forward current
transfer ratio
2SB0792
2SB0792A
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
*
h
FE
Rank classification
Rank
h
FE
R
130 ~ 220
2SB0792
2SB0792A
IR
2FR
S
185 ~ 330
IS
2FS
T
260 ~ 450
IT
鈥?/div>
Note.) The Part numbers in the Parenthesis show
conventional part number.
Marking
Symbol
203
0.4
鹵0.2
5擄
1
2
3
