鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Noise voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
NV
Conditions
I
C
= 鈭?0 碌A,
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
I
E
= 鈭?0 碌A,
I
C
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?0
mA, I
B
= 鈭?
mA
V
CE
= 鈭?0
V, I
C
= 鈭?
mA, G
V
=
80 dB
R
g
=
100 k鈩? Function
=
FLAT
180
Min
鈭?20
鈭?20
鈭?
鈭?00
鈭?
520
鈭?/div>
0.6
150
Typ
Max
Unit
V
V
V
nA
碌A
錚?/div>
V
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
180 to 360
R
260 to 520
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00055BED
4.1
鹵0.2
鈥?/div>
High collector-emitter voltage (Base open) V
CEO
鈥?/div>
Low noise voltage NV
鈥?/div>
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R 0.9
R 0.7
4.5
鹵0.1
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