Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SD661 and 2SD661A
Unit: mm
6.9鹵0.1
0.4
q
q
q
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
Low noise voltage NV.
High foward current transfer ratio h
FE
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0
s
2.5鹵0.1
1.0
Features
1.5
1.5 R0.9
R0.9
1.0鹵0.1
R
0.
s
0.85
Absolute Maximum Ratings
(Ta=25藲C)
0.55鹵0.1
0.45鹵0.05
1.25鹵0.05
Parameter
Collector to
base voltage
Collector to
2SB745
2SB745A
2SB745
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
鈥?5
鈥?5
鈥?5
鈥?5
鈥?
鈥?00
鈥?0
400
150
鈥?5 ~ +150
Unit
V
3
2
1
emitter voltage 2SB745A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Collector
3:Emitter
2.5
2.5
EIAJ:SC鈥?1
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SB745
2SB745A
2SB745
2SB745A
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NV
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CB
= 鈥?V, I
E
= 2mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
V
CE
= 鈥?V, I
C
= 鈥?00mA
V
CB
= 鈥?V, I
E
= 2mA, f = 200MHz
V
CE
= 鈥?0V, I
C
= 鈥?mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
鈥?0.7
150
150
鈥?5
鈥?5
鈥?5
鈥?5
鈥?
180
700
鈥?0.6
鈥?
V
V
MHz
mV
min
typ
max
鈥?00
鈥?
Unit
nA
碌A(chǔ)
V
4.1鹵0.2
4.5鹵0.1
7
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
*
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
T
360 ~ 700
h
FE
Rank
1
1
2
3
