Transistor
2SB0726
(2SB726)
Silicon PNP epitaxial planer type
For general amplification
Unit: mm
5.0
鹵0.2
4.0
鹵0.2
q
q
High foward current transfer ratio h
FE
.
High collector to emitter voltage V
CEO
.
0.7
鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?0
鈥?0
鈥?
鈥?00
250
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
0.45
+0.15
脨0.1
2.5
+0.6
脨0.2
1
2 3
12.9
鹵0.5
0.45
+0.15
脨0.1
2.5
+0.6
脨0.2
2.3
鹵0.2
0.7
鹵0.2
1:Emitter
2:Collector
3:Base
EIAJ:SC鈥?3A
TO-92-A1 Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CB
= 鈥?V, I
E
= 鈥?mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CE
= 鈥?V, I
C
= 鈥?00mA
V
CB
= 鈥?V, I
E
= 2mA, f = 200MHz
min
typ
5.1
鹵0.2
s
Features
max
鈥?00
鈥?
Unit
nA
碌A(chǔ)
V
V
V
鈥?0
鈥?0
鈥?
180
700
鈥?0.6
鈥?
150
鈥?.2
V
CE(sat)
V
BE
f
T
V
V
MHz
*
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
T
360 ~ 700
h
FE
Rank
Note.) The Part number in the Parenthesis shows conventional part number.
184
1
2
3
