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2SB0709A Datasheet

  • 2SB0709A

  • Silicon PNP epitaxial planar type

  • 4頁

  • PANASONIC

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Transistors
2SB0709A
(2SB709A)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0601A (2SD601A)
鈻?/div>
Features
鈥?/div>
High forward current transfer ratio h
FE
鈥?/div>
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.40
+0.10
鈥?.05
3
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
Unit: mm
0.16
+0.10
鈥?.06
1
2
(0.65)
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
鈥?.05
10藲
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
鈭?5
鈭?5
鈭?
鈭?00
鈭?00
200
150
鈭?5
to
+150
Unit
V
V
V
mA
mA
mW
擄C
擄C
1.1
+0.2
鈥?.1
1.1
+0.3
鈥?.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: B
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
I
E
= 鈭?0 碌A(chǔ),
I
C
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
160
鈭?/div>
0.3
80
2.7
Min
鈭?5
鈭?5
鈭?
鈭?/div>
0.1
鈭?00
460
鈭?/div>
0.5
Typ
Max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Marking symbol
Q
160 to 260
BQ
R
210 to 340
BR
S
290 to 460
BS
No-rank
160 to 460
B
Product of no-rank is not classified and have no marking symbol for rank.
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJD00047BED
0 to 0.1
0.4
鹵0.2
5藲
1

2SB0709A 產(chǎn)品屬性

  • 表面貼裝

  • 1.5mm

  • Mini3 G1

  • 2.9 x 1.5 x 1.1mm

  • 3

  • PNP

  • 200 mW

  • -7 V

  • -100 mA

  • -45 V

  • -0.5 V

  • -45 V

  • 160 V

  • +150 °C

  • 80 MHz

  • 1

  • 通用

  • 單

  • 2.9mm

  • 1.1mm

2SB0709A相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    For low-frequency general amplification
    PANASONIC
  • 英文版
    For low-frequency general amplification
    PANASONIC ...
  • 英文版
    For low-frequency general amplification
    PANASONIC
  • 英文版
    For low-frequency general amplification
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    For general amplification
    PANASONIC
  • 英文版
    For general amplification
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency and low-...
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency and low-...
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency output a...
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency output a...
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type(For low-frequency amplific...
    PANASONIC

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