鈥?/div>
High DC current gain: h
FE
= 200~700
High breakdown voltage: V
CEO
=
鈭?20
V
Low pulse noise. Low 1/f noise
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
鈭?20
鈭?20
鈭?
鈭?00
鈭?0
300
125
鈭?5~125
Unit
V
V
V
mA
mA
mW
擄C
擄C
JEDEC
JEITA
TO-92
SC-43
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5F1B
temperature/current/voltage and the significant change in
Weight: 0.21 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
(Note)
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
= 鈭?20
V, I
E
=
0
V
EB
= 鈭?
V, I
C
=
0
I
C
= 鈭?
mA, I
B
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
mA
I
C
= 鈭?0
mA, I
B
= 鈭?
mA
V
CE
= 鈭?
V, I
C
= 鈭?
mA
V
CE
= 鈭?
V, I
C
= 鈭?
mA
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
V
CE
= 鈭?
V, I
C
= 鈭?.1
mA, f
=
10 Hz,
R
G
=
10 k惟
Noise figure
NF
V
CE
= 鈭?
V, I
C
= 鈭?.1
mA, f
=
1 kHz,
R
G
=
10 k惟
V
CE
= 鈭?
V, I
C
= 鈭?.1
mA, f
=
1 kHz,
R
G
=
100
惟
Min
鈳?/div>
鈳?/div>
鈭?20
200
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
Typ.
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈭?.65
100
4.0
鈳?/div>
鈳?/div>
3
Max
鈭?.1
鈭?.1
鈳?/div>
700
鈭?.3
鈳?/div>
鈳?/div>
鈳?/div>
6
2
鈳?/div>
dB
V
V
MHz
pF
Unit
渭A
渭A
V
Note: h
FE
classification GR: 200~400, BL: 350~700
1
2007-11-01
next
2SA970_07相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
High voltage transistors
ETC
-
英文版
High voltage transistors
ETC
-
英文版
For low-frequency Power amplification Complementary
PANASONIC
-
英文版
isc Silicon PNP Power Transistor
ISC [Incha...
-
英文版
Power Transistors
-
英文版
2SA904 2SA904A
ETC
-
英文版
2SA904 2SA904A
ETC [ETC]
-
英文版
2SA905
ETC
-
英文版
2SA905
ETC [ETC]
-
英文版
2SA907 2SA908 2SA909
ETC
-
英文版
Silicon PNP Power Transistors
ISC [Incha...
-
英文版
2SA907 2SA908 2SA909
ETC [ETC]
-
英文版
2SA907 2SA908 2SA909
ETC
-
英文版
Silicon PNP Power Transistors
ISC [Incha...
-
英文版
2SA907 2SA908 2SA909
ETC [ETC]
-
英文版
2SA907 2SA908 2SA909
ETC
-
英文版
2SA907 2SA908 2SA909
ETC [ETC]
-
英文版
SI PNP EPITAXIAL PLANAR
ETC
-
英文版
SI PNP EPITAXIAL PLANAR
ETC [ETC]
-
英文版
SI PNP EPITAXIAL PLANAR
PANASONIC