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2SA966_07 Datasheet

  • 2SA966_07

  • Audio Power Amplifier Applications

  • 121.39KB

  • 4頁

  • TOSHIBA

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2SA966
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA966
Audio Power Amplifier Applications
Unit: mm
鈥?/div>
Complementary to 2SC2236 and 3-W output applications.
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
Rating
鈭?0
鈭?0
鈭?
鈭?.5
1.5
900
150
鈭?5
to 150
Unit
V
V
V
A
A
mW
擄C
擄C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
TO-92MOD
temperature, etc.) may cause this product to decrease in the
JEITA
鈥?/div>
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-5J1A
absolute maximum ratings.
Weight: 0.36 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
1
2006-11-09

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