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2SA965_07 Datasheet

  • 2SA965_07

  • Power Amplifier ApplicationsDriver-Stage Amplifier Applicati...

  • 124.85KB

  • 4頁(yè)

  • TOSHIBA

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2SA965
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA965
Power Amplifier Applications
Driver-Stage Amplifier Applications
Unit: mm
鈥?/div>
Complementary to 2SC2235.
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
Rating
鈭?20
鈭?20
鈭?
鈭?00
800
900
150
鈭?5
to 150
Unit
V
V
V
mA
mA
mW
擄C
擄C
JEDEC
TO-92MOD
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
鈥?/div>
temperature/current/voltage and the significant change in
TOSHIBA
2-5J1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.36 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09

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