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2SA94 Datasheet

  • 2SA94

  • High voltage transistors

  • 457.36KB

  • 3頁

  • ETC

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上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A94
TRANSISTOR錛?PNP
錛?/div>
TO鈥?2
FEATURES
Power dissipation
P
CM
: 0.625 W
Collector current
I
CM:
-0.2 A
Collector-base voltage
V
(BR)CBO
:
-400 V
Operating and storage junction temperature range
T
J
錛孴
stg
: -55鈩?to +150鈩?/div>
ELECTRICAL
unless
CHARACTERISTICS
錛?/div>
Tamb=25
鈩?/div>
specified錛?/div>
Symbol
V (BR)
CBO
V (BR)
CEO
V (BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
錛?/div>
1
錛?/div>
DC current gain
h
FE
錛?/div>
2
錛?/div>
h
FE
錛?/div>
3
錛?/div>
V
CE
(sat)
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter saturation voltage
Transition frequency
V
BE
(sat)
f
T
Test
錛圱amb=25鈩冿級(jí)
1.EMITTER
2.BASE
3. COLLECTOR
1 2 3
otherwise
Parameter
conditions
MIN
-400
-400
-5
TYP
MAX
UNIT
V
V
銆€銆€V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Ic= -100渭A錛?I
E
=0
I
C
= -1 mA錛孖
B
=0
I
E
=-100渭A錛孖
C
=0
V
CB
=-400 V, I
E
=0
V
CE
=-400 V, I
B
=0
V
EB
= -4 V, I
C
=0
V
CE
=-10V, I
C
=-10 mA
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-100 mA
I
C
=-10 mA錛孖
B
=-1mA
I
C
=-50 mA錛孖
B
=-5mA
I
C
=-10 mA錛孖
B
= -1 mA
V
CE
=-20V錛?I
C
=-10mA
f =30MHz
-0.1
-5
-0.1
80
70
60
-0.2
-0.3
-0.75
50
300
銆€渭A
銆€渭A
銆€渭A
V
V
V
MHz

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