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2SA949_07 Datasheet

  • 2SA949_07

  • Driver-Stage Audio Amplifier Applications High-Voltage Switc...

  • 4頁

  • TOSHIBA

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2SA949
TOSHIBA Transistor
Silicon PNP Triple Diffused Type
2SA949
Driver-Stage Audio Amplifier Applications
High-Voltage Switching Applications
Unit: mm
鈥?/div>
鈥?/div>
鈥?/div>
High breakdown voltage: V
CEO
=
鈭?50
V
Low output capacitance: C
ob
= 5.0 pF (max)
High transition frequency: f
T
= 120 MHz (typ.)
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
鈭?50
鈭?50
鈭?
鈭?0
5
800
150
鈭?5
to 150
Unit
V
V
V
mA
mA
mW
擄C
擄C
JEDEC
JEITA
TO-92MOD
鈥?/div>
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5J1A
temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09

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