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2SA921 Datasheet

  • 2SA921

  • For high breakdown voltage low-noise amplification Complemen...

  • 3頁(yè)

  • PANASONIC

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Transistors
2SA0921
(2SA921)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
鈻?/div>
Features
0.7
鹵0.1
0.7
鹵0.2
Unit: mm
5.0
鹵0.2
5.1
鹵0.2
4.0
鹵0.2
鈥?/div>
High collector-emitter voltage (Base open) V
CEO
鈥?/div>
Low noise voltage NV
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
鈭?20
鈭?20
鈭?
鈭?0
鈭?0
250
150
鈭?5
to
+150
Unit
V
V
1
2 3
2.3
鹵0.2
12.9
鹵0.5
0.45
+0.15
鈥?.1
2.5
+0.6
鈥?.2
2.5
+0.6
鈥?.2
0.45
+0.15
鈥?.1
V
mA
mA
mW
擄C
擄C
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
NV
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
I
E
= 鈭?0 碌A(chǔ),
I
C
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
CE
=
鈭?
V, I
C
=
鈭?
mA
I
C
= 鈭?0
mA, I
B
= 鈭?
mA
V
CB
= 鈭?
V, I
E
=
2 mA, f
=
200 MHz
V
CE
=
鈭?0
V, I
C
=
鈭?
mA, G
V
= 80 dB
R
g
= 100 k鈩? Function = FLAT
200
150
180
Min
鈭?20
鈭?20
鈭?
鈭?00
鈭?
700
鈭?/div>
0.6
Typ
Max
Unit
V
V
V
nA
碌A(chǔ)
錚?/div>
V
MHz
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
R
180 to 360
S
260 to 520
T
360 to 700
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00007BED
1

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