Transistor
2SA0921
(2SA921)
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
5.0鹵0.2
Unit: mm
4.0鹵0.2
G
G
High collector to emitter voltage V
CEO
.
Low noise voltage NV.
(Ta=25藲C)
Ratings
鈥?20
鈥?20
鈥?
鈥?0
鈥?0
250
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
13.5鹵0.5
5.1鹵0.2
I
Features
0.45
鈥?.1
1.27
+0.2
0.45
鈥?.1
1.27
+0.2
1 2 3
2.3鹵0.2
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
I
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
I
C
= 鈥?0碌A, I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A, I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CB
= 鈥?V, I
E
= 2mA, f = 200MHz
V
CE
= 鈥?0V, I
C
= 鈥?mA, G
V
= 80dB
R
g
= 100k鈩? Function FLAT
200
150
鈥?20
鈥?20
鈥?
180
520
鈥?0.6
V
MHz
mV
min
typ
max
鈥?00
鈥?
Unit
nA
碌A
V
V
V
*
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
h
FE
Rank
Note.) The Part number in the Parenthesis shows conventional part number.
1
1
2
3
