鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
鈭?00 碌A(chǔ),
I
B
= 0
I
E
=
鈭?0 碌A(chǔ),
I
C
= 0
V
CB
= 鈭?00
V, I
E
=
0
V
CE
= 鈭?
V, I
C
= 鈭?0
mA
I
C
= 鈭?0
mA, I
B
= 鈭?
mA
V
CB
= 鈭?0
V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
鈭?
V, I
E
= 0, f = 1 MHz
70
5
130
Min
鈭?50
鈭?
鈭?
330
鈭?
Typ
Max
Unit
V
V
碌A(chǔ)
錚?/div>
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
R
130 to 220
S
185 to 330
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2003
SJD00005CED
16.0
鹵1.0
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
3.05
鹵0.1
1
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