鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
=
鈭?
mA, I
E
= 0
I
C
=
鈭?
mA, I
B
= 0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?.5
A, I
B
= 鈭?/div>
0.15 A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.2 A
V
CB
= 鈭?
V, I
E
=
0.5 A, f
=
200 MHz
V
CB
=
鈭?0
V, I
E
= 0, f = 1 MHz
150
45
80
Min
鈭?0
鈭?0
鈭?
鈭?00
鈭?0
220
鈭?.0
鈭?.5
Typ
Max
Unit
V
V
碌A
碌A
碌A
錚?/div>
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
80 to 160
R
120 to 220
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00003BED
16.0
鹵1.0
鈥?/div>
Output of 4 W can be obtained by a complementary pair with
2SC1847
鈥?/div>
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.9
鹵0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
3.05
鹵0.1
next
2SA886相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 30MA I(C) | SIP
ETC
-
英文版
TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 30MA I(C) | SIP
ETC
-
英文版
TRANSISTOR | BJT | PNP | 210V V(BR)CEO | 30MA I(C) | SIP
ETC
-
英文版
2SA807 2SA808 2SA808A
ETC
-
英文版
Silicon PNP Power Transistors
ISC [Incha...
-
英文版
2SA807 2SA808 2SA808A
ETC [ETC]
-
英文版
2SA807 2SA808 2SA808A
ETC
-
英文版
isc Silicon PNP Power Transistor
ISC [Incha...
-
英文版
2SA807 2SA808 2SA808A
ETC [ETC]
-
英文版
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAX...
-
英文版
Silicon Epitaxial Planar Transistor
BILIN
-
英文版
2SA812
金譽
-
英文版
PNP Silicon Epitaxial Transistor
KEXIN [Gua...
-
英文版
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-23VAR
-
英文版
SILICON PNP EPITAXIAL BASE MESA TYPE
TOSHIBA
-
英文版
SILICON PNP EPITAXIAL BASE MESA TYPE
TOSHIBA [T...
-
英文版
Silicon PNP Power Transistors
ISC [Incha...
-
英文版
Silicon PNP Power Transistors
SAVANTIC [...
-
英文版
SILICON PNP EPITAXIAL BASE MESA TYPE
TOSHIBA
-
英文版
SILICON PNP EPITAXIAL BASE MESA TYPE
TOSHIBA [T...