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2SA879R Datasheet

  • 2SA879R

  • TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 70MA I(C) | SC-51

  • 4頁

  • ETC

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Transistor
2SA0879
(2SA879)
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1573
5.9
鹵0.2
4.9
鹵0.2
Unit: mm
q
High collector to emitter voltage V
CEO
.
0.7
鹵0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
鈥?50
鈥?00
鈥?
鈥?00
鈥?0
1
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
W
藲C
藲C
0.45
+0.2
鈥?.1
(1.27)
13.5
鹵0.5
0.45
+0.2
鈥?.1
(1.27)
1 2 3
s
Absolute Maximum Ratings
(Ta=25藲C)
(3.2)
0.7
+0.3
鈥?.2
8.6
鹵0.2
s
Features
2.54
鹵0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC鈥?1
TO-92L-A1 Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?2V, I
B
= 0
I
C
= 鈥?00碌A(chǔ), I
B
= 0
I
E
= 鈥?碌A(chǔ), I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 10mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
50
80
5
10
鈥?00
鈥?
60
220
鈥?.5
V
MHz
pF
min
typ
max
鈥?
Unit
碌A(chǔ)
V
V
*
h
FE
Rank classification
Q
60 ~ 150
R
100 ~ 220
h
FE
Rank
Note.) The Part number in the Parenthesis shows conventional part number.
92

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