Transistor
2SA838
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC1359
5.0鹵0.2
Unit: mm
4.0鹵0.2
q
High transition frequency f
T
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?0
鈥?0
鈥?
鈥?0
250
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
13.5鹵0.5
5.1鹵0.2
s
Features
0.45
鈥?.1
1.27
+0.2
0.45
鈥?.1
1.27
+0.2
1 2 3
2.3鹵0.2
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer
capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NF
Z
rb
C
re
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
V
EB
= 鈥?V, I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CE
= 鈥?0V, I
C
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 1mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 1mA, f = 5MHz
V
CE
= 鈥?0V, I
C
= 鈥?mA, f = 2MHz
V
CE
= 鈥?0V, I
C
= 鈥?mA,
f = 10.7MHz
150
70
鈥?0.1
鈥?0.7
300
2.8
22
1.2
4.0
50
2.0
min
typ
max
鈥?0.1
鈥?00
鈥?0
220
V
V
MHz
dB
鈩?/div>
pF
Unit
碌A
碌A
*
h
FE
Rank classification
B
70 ~ 140
C
110 ~ 220
h
FE
Rank
1
1
2
