2SB852K / 2SA830S
Transistors
High-gain Amplifier Transistor (鈭?2V,
鈭?.3A)
2SB852K / 2SA830S
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k鈩?resistor between base and emitter.
3) Complements the 2SD1383K / 2SD1645S.
External dimensions
(Unit : mm)
2SB852K
2.9
0.4
(3)
1.1
0.8
Circuit diagram
C
(2)
(1)
1.6
2.8
0.95 0.95
0.15
1.9
(1)Emitter
B
(2)Base
(3)Collector
Each lead has same dimensions
R
BE
4k鈩?/div>
2SA830S
E : Emitter
B : Base
C : Collector
E
3.0
4.0
2.0
(15Min.)
Packaging specifications
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
2SB852K
SMT3
B
U
鈭?/div>
T146
3000
2SA830S
SPT
B
鈭?/div>
TP
5000
3Min.
0.45
2.5
5.0
(1) (2) (3)
0.5
0.45
(1)Emitter
(2)Collector
(3)Base
Taping specifications
鈭?/div>
Denotes h
FE
Absolute maximum ratings
(Ta=25擄C)
Parameter
Symbol
Limits
Collector-base voltage
V
CBO
鈭?0
V
CES
鈭?2
Collector-emitter voltage
V
EBO
鈭?
Emitter-base voltage
Collector current
I
C
鈭?.3
2SB852K
0.2
Collector power
P
C
dissipation
0.3
2SA830S
Junction temperature
Tj
150
Storage temperature
Tstg
鈭?5
to
+150
鈭?/div>
R
BE
=0鈩?/div>
Unit
V
V
V
A
W
擄C
擄C
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