1.5 TYP.
Please refer to 鈥淨uality Grades on NEC Semiconductor Devices鈥?/div>
(Document No. C11531E) published by NEC Electronics Corporation to
know the specification of quality grade on the devices and its
recommended applications.
2.9 鹵0.2
0.95 0.95
TYP. TYP.
2
3
+0.1
1
0.4
鈥?.05
0.3
TYP.
Marking
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
鈭?0
鈭?0
鈭?.0
鈭?00
200
150
鈭?5
to +150
V
V
V
mA
mW
擄C
擄C
1.1 to 1.4
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25擄C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
鈭?.58
90
200
鈭?.18
鈭?.62
180
4.5
MIN.
TYP.
MAX.
鈭?.1
鈭?.1
600
鈭?.3
鈭?.68
V
V
MHz
pF
UNIT
TEST CONDITIONS
V
CB
=
鈭?0
V, I
E
= 0 A
V
EB
=
鈭?.0
V, I
C
= 0 A
V
CE
=
鈭?.0
V, I
C
=
鈭?.0
mA
I
C
=
鈭?00
mA, I
B
=
鈭?0
mA
V
CE
= 6.0 V, I
C
=
鈭?.0
mA
V
CE
=
鈭?.0
V, I
E
= 10 mA
V
CE
=
鈭?0
V, I
E
= 0 A, f = 1.0 MHz
Note
.1
0.16
+0.1
鈥?.06
碌
A
碌
A
Note
Pulsed: PW
鈮?/div>
350
碌
s, Duty Cycle
鈮?/div>
2%
h
FE
CLASSIFICATION
Marking
h
FE
M4
90 to 180
M5
135 to 270
M6
200 to 400
M7
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17119EJ2V0DS00 (2nd edition)
(Previous No. TC-1479B)
Date Published March 2004 N CP(K)
Printed in Japan
The mark
shows major revised points.
c
1984
NEC
1
2
3
4
