鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1 *2
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?00 碌A(chǔ),
I
B
=
0
I
E
= 鈭? 碌A(chǔ),
I
C
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?50
mA
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
V
CB
= 鈭?0
V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
鈭?0
V, I
E
= 0, f = 1 MHz
90
50
100
鈭?/div>
0.2
鈭?/div>
0.85
120
11
20
鈭?/div>
0.4
鈭?.2
V
V
MHz
pF
Min
鈭?0
鈭?0
鈭?
鈭?/div>
0.1
220
Typ
Max
Unit
V
V
V
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Palse measurement
*2: Rank classification
Rank
h
FE1
Q
90 to 155
R
130 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00004BED
(3.2)
1
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