鈥?/div>
Excellent h
FE
linearity: h
FE (2)
= 25 (min)
at V
CE
=
鈭?
V, I
C
=
鈭?00
mA
1 watt amplifier application.
Complementary to 2SC1959.
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
鈭?5
鈭?0
鈭?
鈭?00
鈭?00
500
150
鈭?5~150
Unit
V
V
V
mA
mA
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.21 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Collector cut-off current
Emitter cut-off current
Symbol
I
CBO
I
EBO
h
FE (1)
DC current gain
(Note)
h
FE (2)
(Note)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
= 鈭?5
V, I
E
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
V
CE
= 鈭?
V, I
C
= 鈭?0
mA
V
CB
= 鈭?
V, I
E
=
0, f
=
1 MHz
Min
鈳?/div>
鈳?/div>
70
Typ.
鈳?/div>
鈳?/div>
鈳?/div>
Max
鈭?.1
鈭?.1
240
Unit
渭A
渭A
25
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈭?.1
鈭?.8
200
13
鈳?/div>
鈭?.25
鈭?.0
鈳?/div>
鈳?/div>
V
V
MHz
pF
Note: h
FE (1)
classification O: 70~140, Y: 120~240
h
FE (2)
classification O: 25 (min), Y: 40 (min)
1
2007-11-01
2SA562TM_07相關(guān)型號(hào)PDF文件下載
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