銆圫MALL-SIGNAL TRANSISTOR銆?/div>
2SA2193
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
ISAHAYA 2SA2193 is a super mini package resin sealed
silicon PNP epitaxial transistor designed for low frequency
voltage amplify application.
OUTLINE DRAWING
2.1
0.425 1.25 0.425
1.30
Unit:mm
FEATURE
銉籐ow collector to emitter saturation voltage
VCE(sat)=-0.4V max(@IC=-50mA,IB=-5mA)
銉籈xcellent linearity of DC forward current gain
銉籗mall packege for easy mounting
0.65
2.0
0.65
1
0.3
3
2
0.9 0.7
0.15
APPLICATION
For small type machine low frequency voltage amplify
application
0鈭?.1
TERMINAL CONNECTOR
1 : BASE
2 : EMITTER
3 : COLLECTOR
JEITA : SC-70
JEDEC :
-
MAXIMUM RATINGS (Ta=25鈩?
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temprature
Ratings
-60
-40
-6.0
-200
150
+150
-55 鈭?+150
Unit
V
V
V
mA
mW
鈩?/div>
鈩?/div>
TYPE NAME
hFE ITEM
MARKING
P
C
T
j
T
stg
2
W
ELECTRICAL CHARACTERISTICS (Ta=25鈩?
Symbol
V
(BR)CEO
I
I
CBO
EBO
Parameter
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
Test conditions
Min
Limits
Typ
Max
Unit
V
-0.1
-0.1
渭A
渭A
mV
MHz
5.0
pF
I
C
=-1mA, R
BE
=鈭?/div>
V
CB
=-60V, I
E
=0mA
V
EB
=-6V, I
C
=0mA
V
CE
=-1V, I
C
=-10mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-20V, I
E
=10mA
V
CB
=-5V, I
E
=0mA, f=1MHz
-40
h
FE
V
CE(sat)
f
T
C
ob
100
250
300
-400
1
2
