2SA2167
FOR HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
2SA2167 is a silicon PNP epitaxial type transistor.
It is designed with high voltage, high Collector current,
high Collector dissipation.
OUTLINE DRAWING
4.6MAX
1.6
1.5
Unit錛歮m
鈼廐igh voltage V
CEO
=-60V
鈼廐igh Collector current I
C
=-2A
鈼廘ow Collector to Emitter saturation voltage
V
CE錛坰at錛?/div>
錛?.5VMax 錛園I
C
=-1A/IB=-50mA錛?/div>
鈼廐igh Collector dissipation PC=500mW
0.8MIN
FEATURE
E
C
B
1.5
3.0
0.53
MAX
0.48MAX
0.4
4.2MAX
2.5
MARKING
銉?yōu)銉笺偔銉炽?/div>
APPLICATION
Audiovisual apparatus, VTR, Relay drive
MAXIMUM RATINGS錛圱a=25鈩冿級(jí)
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-60
-6
-60
-2
-3
500
150
-55鈭?50
Unit
V
V
V
A
A
mW
鈩?/div>
鈩?/div>
TERMINAL CONNECTOR
鈶狅細(xì)BASE
鈶★細(xì)EMITTER
鈶細(xì)COLLECTOR
JEITA錛歋C-62
JEDEC錛歋OT-89
MARKING
TYPE NAME
A L
D
Lot No.
hFE ITEM
ELECTRICAL CHARACTERISTICS錛圱a=25鈩冿級(jí)
Symbol
V
錛圔R錛塁BO
V
錛圔R錛塃BO
V
錛圔R錛塁EO
I
CBO
I
EBO
h
FE
V
CE錛坰at錛?/div>
f
T
C
ob
Parameter
Collector to Base brake down voltage
Emitter to Base brake down voltage
Collector to Emitter brake down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Test condition
IC=-10uA銆両E=0mA
IE=-10uA銆両C=0mA
IC=-2mA銆丷BE=鈭?/div>
VCB=-50V銆両E=0mA
VEB=-4V銆両C=0mA
VCE=-4V銆両C=-100mA
IC=-1A銆両B=-50mA
VCE=-2V銆両E=10mA
VCB=10V銆両E=0mA銆乫=1MHz
C
55鈭?10
Min
-60
-6
-60
Limits
Typ
Max
Unit
V
V
V
渭A
渭A
鈭?/div>
V
MHz
pF
55
-0.2
65
23
D
90鈭?80
-0.2
-0.2
300
-0.5
MARKING
h
FE
E
150鈭?00
ISAHAYA ELECTRONICS CORPORATION
2SA2167相關(guān)型號(hào)PDF文件下載
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